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MMBD7000 데이터시트(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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MMBD7000 데이터시트(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD www.cj-elec.com 1 SOT-23 Plastic-Encapsulate Diodes MMBD7000 SWITCHING DIODE FEATURES Dual Swithching Diode Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications MARKING: M5C Maximum Ratings@Ta=25 ℃ Parameter Symbol Limits Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage VRRM VRWM 75 V RMS Reverse Voltage VR(RMS) 53 V Average Rectified Output Current IO 200 mA Non-Repetitive Peak Forward Surge Current @ t =8.3 IFSM 2 A Power Dissipation PD 225 mW Thermal Resistance,Junction to Ambient RθJA 556 ℃/W Junction temperature Tj 150 ℃ Storage temperature range TSTG -55~+150 ℃ SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V(BR) IR=100μA 100 V Reverse voltage leakage current IR VR=50V VR=100V 1.0 3.0 μA Forward voltage VF IF=1mA IF=10mA IF=100mA 0.55 0.67 0.75 0.7 0.82 1.1 V Diode capacitance CT VR=0V ,f =1.0MHz 2 pF Reverse recovery time trr Irr=0.1 x IR,RL=100Ω IF=IR=10mA , 4 n s M5C ms D,Apr,2016 M5C= Device code |
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