PD -91703

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

02/24/99

Description

SO -8

IRF7341

www.irf.com

1

Parameter

Max.

Units

Drain- Source Voltage

55

V

4.7

3.8

A

Pulsed Drain Current



38

Power Dissipation

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

W/°C

Gate-to-Source Voltage

± 20

V

Gate-to-Source Voltage Single Pulse tp<10µs

30

V

Single Pulse Avalanche Energy

‚

72

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

…

–––

62.5

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

D1

D1

D2

D2

G1

S2

G2

S1

Top V ie w

8

1

2

3

4

5

6

7