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ACE7409B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE7409B 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE7409B P-Channel 30-V (D-S) MOSFET VER 1.1 1 Description The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features Packaging Type V DS (V) = -30 V I D =-30A (at VGS=-10V) < 1 4mΩ (V GS=-10V) < 20mΩ (V GS=-4.5V) Ordering information ACE7333M XX + H Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) a TA=25 OC ID 30 A TA=70 OC 22 Drain Current (Pulse) c IDM 82 Power Dissipation b TA=25 OC PD 25 W TA=70 OC 16 Operating Temperature/ Storage Temperature TJ,TSTG -55 to 150 OC NN : DFN3*3-8L Pb - free Halogen - free |
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