©2004 Fairchild Semiconductor Corporation

1N458A, Rev. A1

Small Signal Diode

* These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Units

Maximum Repetitive Reverse Voltage

150

V

Average Rectified Forward Current

500

mA

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

4.0

A

A

Storage Temperature Range

-65 to +200

°C

Operating Junction Temperature

175

°C

Symbol

Parameter

Value

Units

Power Dissipation

500

mW

Thermal Resistance, Junction to Ambient

300

°C/W

Symbol

Parameter

Test Conditions

Min.

Max.

Units

Breakdown Voltage

150

V

Forward Voltage

1.0

V

Reverse Leakage

25

5

µA

µA

1N458A

DO-35

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