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CDDFN10-3324P 데이터시트(PDF) 1 Page - Bourns Electronic Solutions |
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CDDFN10-3324P 데이터시트(HTML) 1 Page - Bourns Electronic Solutions |
1 / 5 page Features ■ RoHS compliant* ■ Low capacitance - 0.04 pF (I/O to I/O) ■ ESD protection to IEC 61000-4-2 (Level 4) Applications ■ HDMI 1.3, 1.4 and 2.0 ■ DisplayPort ■ Digital Visual Interface (DVI) ■ SATA and eSATA ■ USB 3.0 ■ Memory protection ■ SIM card ports Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) CDDFN10-3324P - Surface Mount TVS Diode Array *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Parameter Symbol CDDFN10-3324P Unit Peak Pulse Power (tp = 8/20 μS) Ppp 30 W Peak Pulse Current (tp = 8/20 μS) Ipp 4A Operating Temperature TJ -55 to +85 ºC Storage Temperature TSTG -55 to +150 ºC General Information The Model CDDFN10-3324P device provides ESD, CDE and EFT protection for high-speed data ports, meeting IEC 61000-4-2 (ESD) requirements. The Transient Voltage Suppressor array, protecting up to four data lines, offers a Working Peak Reverse Voltage of 3.3 V and a Minimum Breakdown Voltage of 4.5 V. The DFN10 packaged device has an ultra-low typical capacitance of only 0.04 pF between I/O lines. This allows it to be used for protecting sensitive components used on high-speed interfaces. The small footprint of the device allows for flow-through routing on the PCB, helping to maintain matched impedances of the high-speed data lines. Pins 3, 8 Pin 1 Pin 2 Pin 4 Pin 5 Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage VWM 3.3 V Breakdown Voltage @ 1 mA VBR 4.5 V Leakage Current @ VWM IR 0.1 0.5 µA Capacitance @ 1.65 V, f = 1 MHz (I/O to GND) CIN 0.45 0.65 pF Capacitance @ 1.65 V, f = 1 MHz (I/O to I/O) CCROSS 0.04 0.08 pF Clamping Voltage @ 8/20 µs @ IPP VC 7.5 V ESD Protection per IEC 6-1000-4-2 Contact Discharge Air Discharge 12 15 kV |
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