IRF140 datasheet(2/2 Pages) ISC

부품명	IRF140

상세설명	High Power,High Speed Applications

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc N-Channel MOSFET Transistor

IRF140

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=250µA

100

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250µA

2.0

4.0

V

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=15A

0.085

Ω

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=100V; VGS=0

250

µA

VSD

Diode Forward Voltage

IS=27A; VGS=0

2.5

V

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

1400

1600

pF

Crss

Reverse Transfer Capacitance

120

300

Coss

Output Capacitance

550

800

tr

Rise Time

RGS=12.5Ω

VGS =15V

ID=15A;

VDD=30V;

RL=50Ω

115

ns

td(on)

Turn-on Delay Time

20

tf

Fall Time

30

td(off)

Turn-off Delay Time

50

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유사한 부품 번호 - IRF140

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	IRF140	211Kb / 5P	N-CHANNEL POWER MOSFETS
Seme LAB	IRF140	22Kb / 2P	N-CHANNEL POWER MOSFET
Fairchild Semiconductor	IRF140	146Kb / 5P	N-Channel Power MOSFETs, 27 A, 60-100V
Intersil Corporation	IRF140	55Kb / 7P	28A, 100V, 0.077 Ohm, N-Channel Power MOSFET
International Rectifier	IRF140	144Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

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IRF140 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

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