전자부품 데이터시트 검색엔진 |
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IRFP460PBF 데이터시트(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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IRFP460PBF 데이터시트(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 6 page Features ■ RDS(on) (Max 0.24 Ω )@VGS=10V ■ Gate Charge (Typical 130nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested RDS(ON) = 0.24 ohm ID = 20A BVDSS = 500V ● ● ● ▲ ◀ ● ● ● ▲ ◀ 2. Drain 3. Source 1. Gate ® IRFP460PBF Pb Free Plating Product IRFP460PBF Pb 20A,500V Heatsink N-Channel Type Power MOSFET TO-3PB 1 2 3 General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol- ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-3PB pkg is well suited for adaptor power unit and small power inverter application. © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/6 Rev.05 Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 20 A - Continuous (TC = 100°C) 12.5 A IDM Drain Current - Pulsed (Note 1) 80 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1050 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 235 W - Derate above 25°C 1.88 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.53 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W Symbol Parameter Value Units |
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