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74LVC1G3208MDBVTEP 데이터시트(PDF) 3 Page - Texas Instruments

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부품명 74LVC1G3208MDBVTEP
상세설명  SINGLE 3-INPUT POSITIVE OR-AND GATE
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Y
C
1
2
3
6
5
4
C
A
VCC
Y
A
B
B
SN74LVC1G3208-EP
www.ti.com
SCES846A – JANUARY 2013 – REVISED FEBRAURY 2013
Figure 3. Y = (A + B)
⋅⋅ C
Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Supply voltage range
–0.5
6.5
V
VI
Input voltage range(2)
–0.5
6.5
V
VO
Voltage range applied to any output in the high-impedance or power-off state(2)
–0.5
6.5
V
VO
Voltage range applied to any output in the high or low state(2) (3)
–0.5
VCC + 0.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
Continuous current through VCC or GND
±100
mA
Tstg
Storage temperature range
–65
150
°C
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
(3)
The value of VCC is provided in the recommended operating conditions table.
THERMAL INFORMATION
SN74LVC1G3208
THERMAL METRIC(1)
DBV
UNITS
6 PINS
θJA
Junction-to-ambient thermal resistance(2)
207
θJCtop
Junction-to-case (top) thermal resistance(3)
148.1
θJB
Junction-to-board thermal resistance(4)
50.6
°C/W
ψJT
Junction-to-top characterization parameter(5)
41.2
ψJB
Junction-to-board characterization parameter(6)
50.1
θJCbot
Junction-to-case (bottom) thermal resistance(7)
N/A
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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