전자부품 데이터시트 검색엔진 |
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MJE8503 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE8503 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor MJE8503 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 800 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1A IC= 2.5A; IB= 1A,TC=100℃ 2.0 3.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 1A IC= 2.5A; IB= 1A,TC=100℃ 1.5 1.5 V ICEV Collector Cutoff Current VCEV=1400V;VBE(off)=1.5V VCEV=1400V;VBE(off)=1.5V;TC=100℃ 0.25 5.0 mA ICER Collector Cutoff Current VCE= 1400V; RBE= 50Ω,TC= 100℃ 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA hFE DC Current Gain IC= 1A ; VCE= 5V 7.5 COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 60 300 pF Switching times;Resistive Load td Delay Time IC= 2.5A , VCC= 500V, VBE(off)= 5V IB1= 1A; tp= 50μs Duty Cycle≤2.0% 40 200 ns tr Rise Time 125 2000 ns ts Storage Time 1200 4000 ns tf Fall Time 650 2000 ns |
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