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CSD17484F4 데이터시트(PDF) 1 Page - Texas Instruments |
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CSD17484F4 데이터시트(HTML) 1 Page - Texas Instruments |
1 / 13 page D G S 0.20 mm Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17484F4 SLPS550 – MAY 2015 CSD17484F4 30 V N-Channel FemtoFET™ MOSFET 1 Features Product Summary 1 • Low On-Resistance TA = 25°C TYPICAL VALUE UNIT • Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V • Low Threshold Voltage Qg Gate Charge Total (4.5 V) 920 pC Qgd Gate Charge Gate-to-Drain 75 pC • Ultra-Small Footprint (0402 Case Size) VGS = 1.8 V 170 m Ω – 1.0 mm × 0.6 mm VGS = 2.5 V 125 m Ω • Ultra-Low Profile RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 107 m Ω – 0.2 mm Height VGS = 8.0 V 99 m Ω • Integrated ESD Protection Diode VGS(th) Threshold Voltage 0.85 V – Rated >4 kV HBM – Rated >2 kV CDM . Ordering Information(1) • Lead and Halogen Free Device Qty Media Package Ship • RoHS Compliant 7-Inch CSD17484F4 3000 Femto(0402) Reel Tape and 1.0 mm × 0.6 mm 2 Applications Reel 7-Inch Land Grid Array (LGA) CSD17484F4T 250 Reel • Optimized for Load Switch Applications (1) For all available packages, see the orderable addendum at • Optimized for General Purpose Switching the end of the data sheet. Applications • Battery Applications Absolute Maximum Ratings TA = 25°C VALUE UNIT • Handheld and Mobile Applications VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage 12 V 3 Description ID Continuous Drain Current(1) 3.0 A This 99 m Ω, 30 V N-Channel FemtoFET™ MOSFET IDM Pulsed Drain Current(1)(2) 18 A is designed and optimized to minimize the footprint in many handheld and mobile applications. This Continuous Gate Clamp Current 35 IG mA technology is capable of replacing standard small Pulsed Gate Clamp Current(2) 350 signal MOSFETs while providing at least a 60% PD Power Dissipation 500 mW reduction in footprint size. Human Body Model (HBM) 4 kV ESD Rating Charged Device Model (CDM) 2 kV . TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Typical Part Dimensions Avalanche Energy, single pulse ID = 7.1 A, EAS 2.5 mJ L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 85°C/W on 1 inch 2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB. (2) Pulse duration ≤100 μs, duty cycle ≤1% Top View . . 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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