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๋ถ€ํ’ˆ๋ช… LM185BYH1.2-SMD
์ƒ์„ธ๋‚ด์šฉ  Micropower Voltage Reference Diode
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LM185BYH1.2-SMD ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 5 Page - Texas Instruments

 
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SNVS384B โ€“ OCTOBER 2005 โ€“ REVISED JANUARY 2014
LM185-1.2RLQV SMD 5962R8759461 Post 100 krad Electrical Characteristics DC Parameters
(1) (2)
Sub-
Symbol
Parameter
Conditions
Notes
Min
Max
Units
groups
ฮ”VRef
Change in Reverse Breakdown
IR = 10ยตA
(3)
-3
3
%
1
Voltage
IR = 1mA
(3)
-3
3
%
1
IR = 20mA
(3)
-2.5
2.5
%
1
ฮ”VRef / ฮ”IR Reverse Breakdown Voltage
10ยตA
โ‰ค IR โ‰ค 1mA
-15
15
mV
1
Change with Current
1mA
โ‰ค IR โ‰ค 20mA
-25
25
mV
1
VF
Forward Bias Voltage
IF = 2mA
-1.0
-0.4
V
1
(1)
Radiation hardness assured (RHA) products are those with an "RLQV" suffix in the Texas Instruments' part number or those with an "R"
in the SMD number, following "5962".
(2)
Testing and qualification for RHA products is done on a wafer level according to MIL-STD-883, Test Method 1019. Testing is performed
with a 1.5X overtest. To be rated at 100 krad(Si) units are tested to 150 krad(Si) with all parameters remaining inside the post 100 krad
Electrical DC test limits in this table. Interim test points are taken at 50, 75 and 100 krad(Si).
(3)
Change from the 0 rad reading.
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