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SN74HC00PW 데이터시트(PDF) 9 Page - Texas Instruments |
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SN74HC00PW 데이터시트(HTML) 9 Page - Texas Instruments |
9 / 28 page 0 5 10 15 20 25 30 35 40 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V CC (V) CL=50pF C002 Q Q S R Copyright © 2016, Texas Instruments Incorporated 9 SN54HC00, SN74HC00 www.ti.com SCLS181F – DECEMBER 1982 – REVISED JULY 2016 Product Folder Links: SN54HC00 SN74HC00 Submit Documentation Feedback Copyright © 1982–2016, Texas Instruments Incorporated 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The SNx4HC00 is a low-power, wide-operating-voltage NAND gate. This device can drive up to 10 LSTTL loads and can drive 4-mA outputs at 5-V VCC. 9.2 Typical Application Figure 3. Typical NAND Gate Application and Supply Voltage 9.2.1 Design Requirements The SNx4HC00 devices use CMOS technology and have balanced output drive. Take care to avoid bus contention because it drives currents that would exceed maximum limits. The high drive also creates fast edges into light loads. Routing and load conditions must be considered to prevent ringing. 9.2.2 Detailed Design Procedure • Recommended input conditions: – Specified high and low levels. See VIH and VIL in Recommended Operating Conditions. • Recommended output conditions: – Load currents must not exceed 25 mA per output and 50 mA total for the part. – Outputs must not be pulled above VCC. 9.2.3 Application Curve Figure 4. Transition Time vs VCC |
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