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LM2743 데이터시트(PDF) 5 Page - Texas Instruments |
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LM2743 데이터시트(HTML) 5 Page - Texas Instruments |
5 / 41 page LM2743 www.ti.com SNVS276H – APRIL 2004 – REVISED OCTOBER 2015 6.5 Electrical Characteristics Typical limits are for TJ = 25°C only, represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only; minimum and maximum limits apply over the junction temperature range of –40°C to 125°C. Unless otherwise specified, VCC = 3.3 V. Data sheet minimum and maximum specification limits are specified by design, test, or statistical analysis. (See (1)) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VFB FB Pin Voltage VCC = 3 V to 6 V 0.588 0.6 0.612 V UVLO Thresholds Rising 2.76 VON V Falling 2.42 VCC = 3.3 V, VSD = 3.3 V 1 1.5 2.1 Fsw = 600 kHz Operating VCC Current mA IQ_VCC VCC = 5V, VSD = 3.3 V 1 1.7 2.1 Fsw = 600 kHz Shutdown VCC Current VCC = 3.3 V, VSD = 0 V 110 185 µA tPWGD1 PWGD Pin Response Time VFB Rising 6 µs tPWGD2 PWGD Pin Response Time VFB Falling 6 µs ISS-ON SS Pin Source Current VSS = 0 V 7 10 14 µA SS Pin Sink Current During Over VSS = 2.5 V ISS-OC 90 µA Current ISEN-TH ISEN Pin Source Current Trip Point 25 40 55 µA ERROR AMPLIFIER Error Amplifier Unity Gain GBW 9 MHz Bandwidth G Error Amplifier DC Gain 106 dB SR Error Amplifier Slew Rate 3.2 V/µs EAO Pin Current Sourcing and VEAO = 1.5, FB = 0.55 V 2.6 IEAO mA Sinking Capability VEAO = 1.5, FB = 0.65 V 9.2 Error Amplifier Output Voltage Minimum 1 V VEA Maximum 2 V GATE DRIVE IQ-BOOT BOOT Pin Quiescent Current VBOOT = 12 V, VSD = 0 18 90 µA High-Side MOSFET Driver Pull-Up RHG_UP VBOOT = 5 V at 350 mA Sourcing 3 Ω ON resistance High-Side MOSFET Driver Pull- RHG_DN HG = 5 V at 350 mA Sourcing 2 Ω Down ON resistance Low-Side MOSFET Driver Pull-Up RLG_UP VBOOT = 5 V at 350 mA Sourcing 3 Ω ON resistance Low-Side MOSFET Driver Pull- RLG_DN LG = 5 V at 350 mA Sourcing 2 Ω Down ON resistance OSCILLATOR RFADJ = 702.1 kΩ 50 RFADJ = 98.74 kΩ 300 fSW PWM Frequency kHz RFADJ = 45.74 kΩ 475 600 725 RFADJ = 24.91 kΩ 1000 Max High-Side Duty Cycle fSW = 300 kHz 80% D fSW = 600 kHz 76% fSW = 1 MHz 73% LOGIC INPUTS AND OUTPUTS Standby High Trip Point VFB = 0.575 V, VBOOT = 3.3 V, VSD V STBY-IH 1.1 V Rising Standby Low Trip Point VFB = 0.575 V, VBOOT = 3.3 V, VSD V STBY-IL 0.232 V Falling V SD-IH SD Pin Logic High Trip Point VSD Rising 1.3 V (1) The power MOSFETs can run on a separate 1-V to 16-V rail (Input voltage, VIN). Practical lower limit of VIN depends on selection of the external MOSFET. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM2743 |
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