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2 / 5 page Si4833DY Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70796 S-56941—Rev. B, 02-Nov-98 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V, TJ = 55_C –25 mA On-State Drain Currenta ID(on) VDS w –5 V, VGS = –10 V –15 A Drain Source On State Resistancea rDS( ) VGS = –10 V, ID = –2.5 A 0.066 0.085 W Drain-Source On-State Resistancea rDS(on) VGS = –4.5 V, ID = –1.8 A 0.125 0.180 W Forward Transconductancea gfs VDS = –10 V, ID = –2.5 A 5.0 S Diode Forward Voltagea VSD IS = –1.7 A, VGS = 0 V –0.8 –1.2 V Dynamicb Total Gate Charge Qg V10 V V 10 V I 2 5 A 8.7 15 C Gate-Source Charge Qgs VDS = –10 V, VGS = –10 V, ID = –2.5 A 1.9 nC Gate-Drain Charge Qgd 1.3 Turn-On Delay Time td(on) V10 V R 10 W 7 15 Rise Time tr VDD = –10 V, RL = 10 W I 1 A V 10 V R 6 W 9 18 Turn-Off Delay Time td(off) DD , L ID ^ –1 A, VGEN = –10 V, RG = 6 W 14 27 ns Fall Time tf 8 15 Source-Drain Reverse Recovery Time trr IF = –1.7 A, di/dt = 100 A/ms 50 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage Drop VF IF = 1.0 A 0.45 0.5 V Forward Voltage Drop VF IF = 1.0 A, TJ = 125_C 0.36 0.42 V Mi R L k C I Vr = 30 V 0.004 0.100 A Maximum Reverse Leakage Current Irm Vr = 30 V, TJ = 100_C 0.7 10 mA Vr = –30 V, TJ = 125_C 3.0 20 Junction Capacitance CT Vr = 10 V 62 pF |
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