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T1235H 데이터시트(PDF) 4 Page - STMicroelectronics |
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4 / 7 page T1235H Series 4/7 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. Fig. 7: On-state characteristics (maximum values). Fig. 8: Relative variation of critical rate of decrease of main current versus junction temperature (typical values). Fig. 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 Tj(°C) IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C] IGT IH & IL 1 10 100 1000 0 25 50 75 100 125 150 Number of cycles ITSM(A) Non repetitive Tj initial=25°C Repetitive Tc=135°C One cycle t=20ms 0.01 0.10 1.00 10.00 100 1000 2000 tp(ms) ITSM(A),I²t(A²s) Tj initial=25°C ITSM I²t dI/dt limitation: 50A/µs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 200 VTM(V) ITM(A) Tj=25°C Tj max. Vto = 0.80 V Rd = 25 m Ω Tj max. 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 Tj(°C) (dI/dt)c [Tj] / (dI/dt)c [Tj=150°C] 0.1 1.0 10.0 100.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 (dV/dt)c (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c |
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