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LSCP10C60 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - SemiWell Semiconductor

๋ถ€ํ’ˆ๋ช… LSCP10C60
์ƒ์„ธ๋‚ด์šฉ  Silicon Controlled Rectifiers
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์ œ์กฐ์‚ฌ  SEMIWELL [SemiWell Semiconductor]
ํ™ˆํŽ˜์ด์ง€  http://www.semiwellsemi.co.kr
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Absolute Maximum Ratings ( T
J = 25ยฐC unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(AV)
Average On-State Current
Half Sine Wave : TC = 111 ยฐC
6.4
A
IT(RMS)
R.M.S On-State Current
180ยฐ Conduction Angle
10
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
110
A
I2t
I2t for Fusing
t = 8.3ms
60
A2s
di/dt
Critical rate of rise of on-state current
50
A/ใŽฒ
PGM
Forward Peak Gate Power Dissipation
5
W
PG(AV)
Forward Average Gate Power Dissipation
0.5
W
IFGM
Forward Peak Gate Current
2
A
VRGM
Reverse Peak Gate Voltage
5.0
V
TJ
Operating Junction Temperature
- 40 ~ 125
ยฐC
TSTG
Storage Temperature
- 40 ~ 150
ยฐC
SCP10C60
Aug, 2003. Rev. 3
Features
โ—†
Repetitive Peak Off-State Voltage : 600V
โ—†
R.M.S On-State Current ( IT(RMS)= 10 A )
โ—†
Low On-State Voltage (1.4V(Typ.)@ ITM)
โ—†
Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
3. Gate
1. Cathode
Symbol
โ—‹
โ—‹
1/5
SemiWell Semiconductor
Silicon Controlled Rectifiers
TO-220
1
2
3
โ—‹
2. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.


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