SI4948EY datasheet(4/4 Pages) VISHAY

부품명	SI4948EY

상세설명	Dual P-Channel 60-V (D-S), 175C MOSFET

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Si4948EY

Vishay Siliconix

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Document Number: 70166

S-99444—Rev. E, 29-Nov-99

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

2

1

0.1

0.01

10–4

10–3

10–2

10–1

1

30

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

10

Single Pulse Power

Time (sec)

TC = 25_C

Single Pulse

0.01

50

0

30

40

30

20

10

0.1

1

10

1.25

1.50

0

0.1

0.2

0.3

0.4

0.5

246

8

10

–0.25

0.00

0.25

0.50

0.75

–50

–25

0

25

50

75

100

125

150

175

1

10

20

ID = 3.1 A

ID = 250 mA

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

VSD – Source-to-Drain Voltage (V)

VGS – Gate-to-Source Voltage (V)

TJ – Temperature (_C)

0.00

0.25

0.50

0.75

1.00

TJ = 25_C

TJ = 175_C

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 62.5_C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

Notes:

4. Surface Mounted

PDM

t2

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Vishay Siliconix	SI4948BEY	72Kb / 5P	Dual P-Channel 60-V (D-S) 175 MOSFET Rev. A, 15-Mar-04
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Vishay Siliconix	SI4948BEY	166Kb / 8P	Dual P-Channel 60-V (D-S) 175째 MOSFET 01-Jan-2022

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