4

TLC082-Q1, TLC084-Q1

SLOS510D – SEPTEMBER 2006 – REVISED AUGUST 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential voltages, are with respect to GND.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

–0.3

17

V

Differential input voltage

V

Continuous total power dissipation

See Thermal Information

Operating junction temperature

–40

125

°C

Operating ambient temperature

–40

125

°C

Maximum junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±2000

V

Charged-device model (CDM), per AEC Q100-011

All pins

±500

Corner pins (1, 4, 5, and 8)

±750

6.3 Recommended Operating Conditions

MIN

MAX

UNIT

Supply voltage

Single supply

4.5

16

V

Split supply

±2.25

±8

Common-mode input voltage

GND

V

Operating junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

TLC082-Q1

TLC084-Q1

UNIT

DGN (MSOP-PowerPAD)

PWP (HTSSOP)

8-PIN

20-PIN

Junction-to-ambient thermal resistance

58.1

40

°C/W

Junction-to-case (top) thermal resistance

55.2

46.7

°C/W

Junction-to-board thermal resistance

35.3

22.9

°C/W

Junction-to-top characterization parameter

2.1

1

°C/W

Junction-to-board characterization parameter

35.9

26.7

°C/W

Junction-to-case (bottom) thermal resistance

6.9

2.6

°C/W