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BC449A 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 BC449A
상세설명  High Voltage Transistors
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC449A 데이터시트(HTML) 2 Page - ON Semiconductor

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BC447, BC449, BC449A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
BC447
BC449, BC449A
V(BR)CEO
80
100
-
-
-
-
Vdc
Collector - Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
BC447
BC449, BC449A
V(BR)CBO
80
100
-
-
-
-
Vdc
Emitter - Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
-
-
Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
BC447
(VCB = 80 Vdc, IE = 0)
BC449, BC449A
ICBO
-
-
-
-
100
100
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BC447, BC449
BC449A
(IC = 10 mAdc, VCE = 5.0 Vdc)
BC447, BC449
BC449A
(IC = 100 mAdc, VCE = 5.0 Vdc)
BC447, BC449
BC449A
hFE
50
120
50
100
50
60
-
-
-
-
-
-
460
220
-
-
-
-
-
Collector - Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
-
0.125
0.25
Vdc
Base - Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VBE(sat)
-
0.85
-
Vdc
Base - Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1)
VBE(on)
0.55
-
-
0.76
0.7
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current - Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
200
-
MHz
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle 2%


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