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TMP007AIYZFR 데이터시트(PDF) 5 Page - Texas Instruments |
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TMP007AIYZFR 데이터시트(HTML) 5 Page - Texas Instruments |
5 / 55 page 5 TMP007 www.ti.com SBOS685C – APRIL 2014 – REVISED JULY 2015 Product Folder Links: TMP007 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Input voltage rating applies to all TMP007 input voltages. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT Voltage Supply voltage, VS 7 V Input voltage ADR1 VS + 0.5 V All other pins –0.5 +7 V Current Input current, any pin 10 mA Temperature Operating range –40 +125 °C Junction, TJ 125 °C Storage, Tstg –65 +125 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 Machine model ±200 (1) Object temperature is application dependent. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply voltage, VS 2.5 3.3 5.5 V Operating temperature range –40 +125 °C Die temperature, TDIE 125 °C Object temperature, TOBJ See note (1) °C (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) TMP007 UNIT YZF (DSBGA) 8 PINS RθJA Junction-to-ambient thermal resistance 115.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 0.4 °C/W RθJB Junction-to-board thermal resistance 14.3 °C/W ψJT Junction-to-top characterization parameter 3.8 °C/W ψJB Junction-to-board characterization parameter 14.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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