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MMBD452 데이터시트(PDF) 1 Page - Diode Semiconductor Korea

부품명 MMBD452
상세설명  Dual Hot-Carrier Diodes
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제조업체  DSK [Diode Semiconductor Korea]
홈페이지  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

MMBD452 데이터시트(HTML) 1 Page - Diode Semiconductor Korea

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Dual Hot-Carrier Diodes
MMBD452
FEATURES
Very low capacitance.
Extremely low minority carrier lifetime.
Low reverse leakage.
Power dissipation Pd=225mW.
APPLICATIONS
Designed primarily for UHF and VHF detector
SOT-23
applications.
ORDERING INFORMATION
Type No.
Marking
Package Code
MMBD452
5N
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Continuous reverse voltage
VR
30
V
Power Dissipation
Pd
225
mW
Operating junction temperature range
TJ
-55 to+125
Junction and storage temperature
TSTG
-55 to+150
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Reverse Breakdown Voltage
V(BR)
30
V
IR=10μA
Forward voltage
VF
0.38
0.52
0.45
0.6
V
IF=1.0mA
IF=10mA
Reverse current
IR
13
200
nA
VR=25V
Total Capacitanc
CT
0.9
1.5
pF
VR=15V,f=1MHz
Pb
Lead-free
Diode Semiconductor Korea
www.diode.kr


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