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IRFP22N60K 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP22N60K
상세설명  SMPS MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP22N60K 데이터시트(HTML) 2 Page - International Rectifier

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IRFP22N60K
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Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
600
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.30
–––
V/°C
Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
240
280
m
Ω VGS = 10V, ID = 13A „
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
–––
–––
50
µA
VDS = 600V, VGS = 0V
–––
–––
250
µA
VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -30V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
11
–––
–––
S
VDS = 50V, ID = 13A
Qg
Total Gate Charge
–––
–––
150
ID = 22A
Qgs
Gate-to-Source Charge
–––
–––
45
nC
VDS = 480V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
76
VGS = 10V
„
td(on)
Turn-On Delay Time
–––
26
–––
VDD = 300V
tr
Rise Time
–––
99
–––
ID = 22A
td(off)
Turn-Off Delay Time
–––
48
–––
RG = 6.2 Ω
tf
Fall Time
–––
37
–––
VGS = 10V
„
Ciss
Input Capacitance
–––
3570 –––
VGS = 0V
Coss
Output Capacitance
–––
350
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
36
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
4710 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
92
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
180
–––
VGS = 0V, VDS = 0V to 480V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ I
SD ≤ 22A, di/dt ≤ 540 A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Notes:
‚ Starting TJ = 25°C, L = 1.5mH, RG = 25Ω,
IAS = 22A
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
S
D
G
Diode Characteristics
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
22
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
88
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 22A, VGS = 0V
„
–––
590
890
TJ = 25°C
IF = 22A
–––
670 1010
TJ = 125°C
di/dt = 100A/µs
„
–––
7.2
11
TJ = 25°C
–––
8.5
13
TJ = 125°C
IRRM
Reverse Recovery Current
–––
26
39
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ns
µC
nA
† Rθ is measured at TJ approximately 90°C


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