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CSD25485F5T 데이터시트(PDF) 1 Page - Texas Instruments |
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CSD25485F5T 데이터시트(HTML) 1 Page - Texas Instruments |
1 / 12 page D G S 0.77 mm 0.35 mm 1.53 mm Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD25485F5 SLPS606 – AUGUST 2016 CSD25485F5 –20-V P-Channel FemtoFET™ MOSFET 1 1 Features 1 • Low On-Resistance • Low Qg and Qgd • Ultra-Small Footprint – 1.53 mm × 0.77 mm – 0.50-mm Pad Pitch • Low Profile – 0.35-mm Height • Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Industrial Load Switch Applications • Optimized for General Purpose Switching Applications 3 Description This 29.7-mΩ, –20-V P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . Typical Part Dimensions . . . . . . . Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage –20 V Qg Gate Charge Total (–4.5 V) 2.7 nC Qgd Gate Charge Gate-to-Drain 0.56 nC RDS(on) Drain-to-Source On- Resistance VGS = –1.8 V 89 m Ω VGS = –2.5 V 51 VGS = –4.5 V 35 VGS = –8 V 29.7 VGS(th) Threshold Voltage –0.95 V . Device Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD25485F5 3000 7-Inch Reel Femto 1.53-mm × 0.77-mm SMD Lead Less Tape and Reel CSD25485F5T 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage –20 V VGS Gate-to-Source Voltage –12 V ID Continuous Drain Current(1) –3.2 A Continuous Drain Current(2) –5.3 IDM Pulsed Drain Current(1)(3) –31 A PD Power Dissipation(1) 0.5 W Power Dissipation(2) 1.4 ESD Rating Human Body Model (HBM) 4000 V Charged Device Model (CDM) 2000 TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C (1) Min cu, typical RθJA = 245°C/W. (2) Max cu, typical RθJA = 90°C/W. (3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%. Top View |
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