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FMBT3906DW1 데이터시트(PDF) 3 Page - Formosa MS |
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FMBT3906DW1 데이터시트(HTML) 3 Page - Formosa MS |
3 / 10 page PARAMETER Collector-Base breakdown voltage Collector-Emitter voltage(3) breakdown Emitter-Base voltage breakdown Base cutoff current CONDITIONS Symbol V (BR)CBO V CEO (BR) V EBO (BR) I BL I CEX MIN. TYP. MAX. -40 -40 -5.0 -50 UNIT V V V nA -50 Formosa MS o Characteristics (AT T =25 C unless otherwise noted) A Off characteristics I = -10uA, I = 0 c E I = -1mA, I = 0 c B I = -10uA, I = 0 c C Collector cutoff current V = -30Vdc, V = -3.0Vdc CE EB V = -30Vdc, V = -3.0Vdc CE EB 3.Pulse test : pukse width < 300uS, duty cycle < 2.0%. PARAMETER DC current gain CONDITIONS Symbol h FE MIN. TYP. MAX. 60 80 100 60 UNIT - Vdc 30 On characteristics(3) I = -0.1mA, V = -1.0V c CE I = -1.0mA, V = -1.0V c CE I = -10mA, V = -1.0V c CE I = -50mA, V = -1.0V c CE I = -100mA, V = -1.0V c CE Collector-Emitter saturation voltage(3) Base-Emitter saturation voltage(3) I = -10mA, I = -1.0mA c B I = -50mA, I = -5.0mA c B I = -10mA, I = -1.0mA c B I = -50mA, I = -5.0mA c B Vdc -0.25 -0.40 -0.85 -0.95 -0.65 V CE(sat) V BE(sat) PARAMETER Input capacitance CONDITIONS Symbol C ibo MIN. TYP. MAX. 250 4.5 1.0 2.0 UNIT - 0.1 Small-signal characteristics I = -10mA, V = -20V, f = 100MHz C CE Output admittance V = -5.0V, I = -100uA, RS = 1.0K ohms, f = 1.0KHZ CE C dB 400 60 4.0 h fe NF Current-gain-bandwidth product(4) Output capacitance Input impedance Voltage feeback radio Small-signal current gain Noise figure V = -5.0V, I = 0, f = 1.0MHz CB E V = -0.5V, I = 0, f = 1.0MHz EB C V = -10A, I = -1.0mA, f = 1.0KHz CE C V = -10V, I = -1.0mA, f = 1.0KHz CE C V = -10V, I = -1.0mA, f = 1.0KHz CE C V = -10V, I = -1.0mA, f = 1.0KHz CE C f T C obo h ie h re h oe 12 10.0 100 3.0 -4 X 10 umhos pF kohms MHz pF Page 3 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 PARAMETER Storage time CONDITIONS Symbol ts MIN. TYP. MAX. 35 225 UNIT Switching characteristics Delay time Rise time Fall time V = -3.0V, V = 0.5V, I = -10mA, I = -1.0mA CC BE C B1 td tr tf 75 V = -3.0V, I =-10mA, I = I = -1.0mA CC C B1 B2 ns 35 4.f is defined as the frequency at which h extrapolates to unity. T fe 300 5. Pulse Test: Pulse Width <=300µs, Duty cycle«=2.0% FMBT3906DW1 Document ID Issued Date Revised Date Revision Page. Dual PNP Epitaxial Planar Transistor DS-231113 2008/02/10 2010/03/10 B 10 |
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