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SI4122-BM 데이터시트(PDF) 4 Page - List of Unclassifed Manufacturers

부품명 SI4122-BM
상세설명  DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS
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Si 41 33
4
Rev. 1.1
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Ambient Temperature
TA
–40
25
85
°C
Supply Voltage
V
DD
2.7
3.0
3.6
V
Supply Voltages Difference
V
(VDDR – VDDD),
(VDDI – VDDD)
–0.3
0.3
V
Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25°C unless otherwise stated.
Table 2. Absolute Maximum Ratings1,2
Parameter
Symbol
Value
Unit
DC Supply Voltage
VDD
–0.5 to 4.0
V
Input Current3
IIN
±10
mA
Input Voltage3
V
IN
–0.3 to VDD+0.3
V
Storage Temperature Range
T
STG
–55 to 150
oC
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3. For signals SCLK, SDATA, SENB, PWDNB and XIN.


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