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TPIC5401NE 데이터시트(PDF) 6 Page - Texas Instruments |
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TPIC5401NE 데이터시트(HTML) 6 Page - Texas Instruments |
6 / 17 page TPIC5401 H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY SLIS024A – DECEMBER 1993 – REVISED MARCH 1994 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PARAMETER MEASUREMENT INFORMATION VDD = 25 V 354 µH ID tw tav IAS (see Note B) V(BR)DSX = 60 V Min VOLTAGE AND CURRENT WAVEFORMS 0 V 0 V 0 V ID VDS DUT VDS TEST CIRCUIT (see Note A) Pulse Generator 50 Ω Rgen 50 Ω VGS VGS 15 V NOTES: A. The pulse generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω. B. Input pulse duration (tw) is increased until peak current IAS = 10 A. Energy test level is defined as E AS + I AS V (BR)DSX tav 2 + 21 mJ. Figure 4. Single-Pulse Avalanche-Energy Test Circuit and Waveforms TYPICAL CHARACTERISTICS 1.5 1 0.5 0 2 2.5 GATE-TO-SOURCE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE TJ – Junction Temperature – °C – 40 – 20 0 20 40 60 80 100 120 140 160 ID = 100 µA ID = 1 mA VDS = VGS Figure 5 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE TJ – Junction Temperature – °C 0.3 0.2 0.1 0 0.4 0.5 – 40 – 20 0 20 40 60 80 100 120 140 160 VGS = 10 V VGS = 15 V ID = 2 A Figure 6 |
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