전자부품 데이터시트 검색엔진 |
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BY396Z 데이터시트(PDF) 2 Page - Diode Semiconductor Korea |
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BY396Z 데이터시트(HTML) 2 Page - Diode Semiconductor Korea |
2 / 2 page 1 2 4 10 8 20 40 60 80 10 0 0 20 40 60 80 TJ =125 8.3ms Single Half Sine-Wave 100 120 140 160 .2 TJ=25 f=1MHz 1 .1 2 4 .4 1.0 2 40 10 20 60 100 4 10 20 40 100 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 2 4 10 100 1.8 2.0 TJ=25 Pulse Width=300 µS 0.5 1 1.5 2 2.5 50 125 175 Single Phase Half Wave 60HZ Resistive or Inductive Load 200 75 150 100 3 25 0 PULSE GENERATOR (NOTE2) D.U.T. 1 N.1. 50 N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) 10 N.1. (-) (+ ) -1.0A -0.25A 0 +0.5A trr 1cm BY396(Z)---BY399S(Z) SET TIMEBASEFOR50/100 ns /cm INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE, NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.4--TYPICAL JUNCTION CAPACITANCE FIG.5--PEAK FORWARD SURGE CURRENT 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O FIG.3 -- FORWARD DERATING CURVE FIG.2 --TYPICAL FORWARD CHARACTERISTIC REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60 Hz www.diode.kr Diode Semiconductor Korea |
유사한 부품 번호 - BY396Z |
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유사한 설명 - BY396Z |
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