전자부품 데이터시트 검색엔진 |
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BY396Z 데이터시트(PDF) 1 Page - Diode Semiconductor Korea |
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BY396Z 데이터시트(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability and similar solvents MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY 398 BY 399 BY 399S UNITS Maximum recurrent peak reverse voltage VRRM 400 800 1000 V Maximum RMS voltage VRMS 280 560 700 V Maximum DC blocking voltage VDC 400 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 3.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG NOTE:1. Measured with I F=0.5A, IR=1A, Irr=0.25A. BY396(Z)---BY399S(Z) DO - 27 100 70 100 BY 396 Easily cleaned with Freon,Alcohol,Isopropanol 200 140 A IFSM 3. Thermal resistance f rom junction to ambient. A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55---- +150 - 55---- +150 22 150 IR 100.0 10.0 200.0 1.25 32 VOLTAGE RANGE: 100--- 1000 V CURRENT: 3.0 A 200 BY 397 3.0 A FAST RECOVERY RECTIFIERS IF(AV) The plastic material carries U/L recognition 94V-0 250 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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