STK11C68-5L45M datasheet(9/10 Pages) ETC

부품명	STK11C68-5L45M

상세설명	CMOS NV SRAM

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STK11C68-M

4-39

Internally,

RECALL is a two step procedure. First, the

SRAM data is cleared and second, the nonvolatile

information is transferred into the SRAM cells. The

RECALL operation in no way alters the data in the

EEPROM cells. The nonvolatile data can be recalled

an unlimited number of times.

On power-up, once VCC exceeds the VCC sense volt-

age of 4.0V, a

RECALL cycle is automatically initiated.

The voltage on the VCC pin must not drop below 4.0V

once it has risen above it in order for the

RECALL to

operate properly.

Due to this automatic

RECALL,

SRAM operation cannot commence until tRECALL after

VCC exceeds 4.0V. 4.0V is a typical, characterized

value.

If the STK11C68-M is in a WRITE state at the end of

power-up

RECALL, the SRAM data will be corrupted.

To help avoid this situation, a 10K Ohm resistor should

be connected between W and system VCC.

유사한 부품 번호 - STK11C68-5L45M

제조업체	부품명	데이터시트	상세설명
Cypress Semiconductor	STK11C68-5L45M	536Kb / 15P	64 Kbit (8K x 8) SoftStore nvSRAM

제조업체	부품명	데이터시트	상세설명
Dallas Semiconductor	DS2227	191Kb / 10P	Flexible NV SRAM Stik
Maxim Integrated Produc...	DS2227	196Kb / 10P	Flexible NV SRAM Stik 112099
Dallas Semiconductor	DS3802	98Kb / 2P	Advanced NV SRAM Battery
Dallas Semiconductor	DS3800	26Kb / 2P	Advanced NV SRAM Battery Cap
Maxim Integrated Produc...	DS3803	584Kb / 10P	1024 Flexible NV SRAM SIMM 112299
ARTSCHIP ELECTRONICS CO...	DS1243Y	309Kb / 11P	NV SRAM with Phantom Clock
	DS1248	358Kb / 15P	NV SRAM with Phantom Clock
	DS1251	586Kb / 18P	NV SRAM with Phantom Clock
List of Unclassifed Man...	STK12C68-M	72Kb / 10P	CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM
Dallas Semiconductor	DS3803	231Kb / 10P	1024k Flexible NV SRAM SIMM