SI4925BDY-E3 datasheet(4/6 Pages) VISHAY

부품명	SI4925BDY-E3

상세설명	Dual P-Channel 30-V (D-S) MOSFET

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Si4925BDY

Vishay Siliconix

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Document Number: 72001

S-50366—Rev. C, 28-Feb-05

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

VDS − Drain-to-Source Voltage (V)

*VGS u minimum VGS at which rDS(on) is specified

0

20

30

10

15

Single Pulse Power

Time (sec)

25

10−3

10−2

1

10

600

10−1

10−4

100

−0.4

−0.2

0.0

0.2

0.4

0.6

0.8

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Threshold Voltage

TJ − Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 85_C/W

3. TJM − TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

1

100

600

10

10−1

10−2

5

Safe Operating Area

100

1

0.1

1

10

100

0.01

10

TA = 25_C

Single Pulse

P(t) = 10

dc

0.1

IDM Limited

ID(on)

Limited

*rDS(on)

Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

유사한 부품 번호 - SI4925BDY-E3

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4925BDY	185Kb / 8P	Dual P-Channel 30-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI4925BDY	185Kb / 8P	Dual P-Channel 30-V (D-S) MOSFET 01-Jan-2022

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유사한 설명 - SI4925BDY-E3

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유사한 부품 번호 - SI4925BDY-E3

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