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BF1203 데이터시트(PDF) 7 Page - NXP Semiconductors |
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BF1203 데이터시트(HTML) 7 Page - NXP Semiconductors |
7 / 20 page 2001 Apr 25 7 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1203 handbook, halfpage 0 IG1 (µA) 10 50 16 12 4 0 8 20 30 40 MCD939 ID (mA) Fig.7 Drain current as a function of gate 1 current; typical values. Amplifier a VDS = 5 V; VG2-S =4V. Tj =25 °C. handbook, halfpage 05 20 0 4 8 12 16 12 3 4 VGG (V) ID (mA) MCD940 Fig.8 Drain current as a function of gate 1 supply voltage (= VGG); typical values. Amplifier a VDS = 5 V; VG2-S = 4 V; Tj =25 °C. RG1 =62kΩ (connected to VGG); see Fig.35. handbook, halfpage 010 25 0 5 10 15 20 24 6 8 VGG = VDS (V) ID (mA) MCD941 RG1 = 39 kΩ 47 k Ω 56 k Ω 62 k Ω 68 k Ω 82 k Ω 100 k Ω Fig.9 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values. Amplifier a VG2-S = 4 V; Tj =25 °C. RG1 connected to VGG; see Fig.35. handbook, halfpage 024 6 VG2-S (V) ID (mA) 20 0 16 12 8 4 MCD942 VGG = 5 V 4.5 V 4 V 3.5 V 3 V Amplifier a VDS = 5 V; Tj =25 °C. RG1 =62kΩ (connected to VGG); see Fig.35. Fig.10 Drain current as a function of gate 2 voltage; typical values. |
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