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AM10P15-550D 데이터시트(PDF) 1 Page - Analog Power |
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AM10P15-550D 데이터시트(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM10P15-550D P-Channel 150-V (D-S) MOSFET VDS (V) ID(A) -7.8 -7.2 Symbol Limit Units VDS -150 VGS ±20 Continuous Drain Current a TC=25°C ID -7.8 IDM -30 IS -7.8 A Power Dissipation a TC=25°C PD 50 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 40 RθJC 3 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Maximum Junction-to-Ambient a Maximum Junction-to-Case Gate-Source Voltage PRODUCT SUMMARY -150 rDS(on) (mΩ) 550 @ VGS = -10V 650 @ VGS = -5.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM10P15-550D_1A |
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