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SI3457BDV 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI3457BDV 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Si3457BDV Vishay Siliconix Document Number: 72019 S-40424—Rev. D, 15-Mar-04 www.vishay.com 1 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) −30 0.054 @ VGS = −10 V −5.0 −30 0.100 @ VGS = −4.5 V −3.7 (1, 2, 5, 6) D (4) S (3) G P-Channel MOSFET TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm Ordering Information: Si3457BDV-T1 Si3457BDV-T1—E3 (Lead Free) Marking Code: 7Bxxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID −5.0 −3.7 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID −4.0 −3.0 A Pulsed Drain Current IDM −20 A Continuous Source Current (Diode Conduction)a IS −1.7 −0.95 Maximum Power Dissipationa TA = 25_C PD 2.0 1.14 W Maximum Power Dissipationa TA = 70_C PD 1.3 0.73 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 5 sec R 53 62.5 Maximum Junction-to-Ambienta Steady State RthJA 90 110 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 25 36 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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