SI9948AEY datasheet(2/4 Pages) VISHAY

부품명	SI9948AEY

상세설명	Dual P-Channel 60-V (D-S), 175C MOSFET

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Si9948AEY

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 70759

S-57253—Rev. B, 24-Feb-98

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –60 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –60 V, VGS = 0 V, TJ = 55_C

–10

mA

On-State Drain Currenta

ID(on)

VDS v –5 V, VGS = –10 V

–15

A

Drain-Source On-State Resistancea

rDS(on)

VGS = –10 V, ID = –2.6 A

0.14

0.17

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –4.5 V, ID = –2.1 A

0.20

0.26

W

Forward Transconductancea

gfs

VDS = –15 V, ID = –2.6 A

5.0

S

Diode Forward Voltagea

VSD

IS = –2.0 A, VGS = 0 V

–1.2

V

Dynamicb

Total Gate Charge

Qg

V30 V V

10 V I

2 6 A

10

20

C

Gate-Source Charge

Qgs

VDS = –30 V, VGS = –10 V, ID = –2.6 A

2.5

nC

Gate-Drain Charge

Qgd

1.8

Turn-On Delay Time

td(on)

V30 V R

30

W

8

20

Rise Time

tr

VDD = –30 V, RL = 30 W

I

1 A V

10 V R

6

W

10

20

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ –1 A, VGEN = –10 V, RG = 6 W

23

40

ns

Fall Time

tf

12

20

Source-Drain Reverse Recovery Time

trr

IF = –2.0 A, di/dt = 100 A/ms

50

90

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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