전자부품 데이터시트 검색엔진 |
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STK5C4U332J-E 데이터시트(PDF) 6 Page - ON Semiconductor |
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STK5C4U332J-E 데이터시트(HTML) 6 Page - ON Semiconductor |
6 / 14 page STK5C4U332J-E www.onsemi.com 6 7. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS at Tc = 25C (Note 7) Parameter Test Conditions Symbol Min Typ Max Unit Power output section Collector-emitter leakage current VCE = 600 V ICE 100 μA Bootstrap diode reverse current VR(BD) = 600 V IR(BD) 100 μA Collector to emitter saturation voltage Ic = 3 A, Tj = 25 C VCE(SAT) 1.6 2.4 V Ic = 1.5 A, Tj = 100 C 1.3 - V Diode forward voltage IF = 3 A, Tj = 25 C VF 1.5 2.3 V IF = 1.5 A, Tj = 100 C 1.3 - V Junction to case thermal resistance Reverse conducting IGBT θj-c(T) - - 11 C/W Switching time Ic = 3 A, VCC = 300 V, Tj = 25C tON - 0.5 1.2 μs tOFF - 0.6 1.4 μs Turn-on switching loss Ic = 1.5 A, VCC = 300 V, Tj = 25C EON - 100 - μJ Turn-off switching loss EOFF - 15 - μJ Total switching loss ETOT - 115 - μJ Turn-on switching loss Ic = 1.5 A, VCC = 300 V, Tj = 100C EON - 120 - μJ Turn-off switching loss EOFF - 20 - μJ Total switching loss ETOT - 140 - μJ Diode reverse recovery energy Ic = 1.5 A, VCC = 300 V, Tj = 100C (di/dt set by internal driver) EREC - 35 - μJ Diode reverse recovery time trr - 150 - ns Reverse bias safe operating area Ic = 6 A, VCE = 450 V RBSOA Full Square - Short circuit safe operating area VCE = 400 V SCSOA 3 - - μs Allowable offset voltage slew rate U to UN, V to VN, W to WN dv/dt 50 - 50 V/ns Driver Section Gate driver consumption current VBS = 15 V (Note 4), per driver ID - 0.1 0.2 mA VDD = 15 V, total ID - 1.3 2.6 mA High level Input voltage HINU, HINV, HINW, LINU, LINV, LINW to GND Vin H 2.5 - - V Low level Input voltage Vin L - - 0.8 V Logic 1 input current VIN = +3.3 V IIN+ - 100 143 μA Logic 0 input current VIN = 0 V IIN- - - 2 μA Bootstrap ON Resistance IB = 1 mA RB - 110 300 Ω FAULT terminal sink current FAULT : ON / VFAULT = 0.1 V IoSD - 2 - mA FAULT clearance delay time FLTCLR 1 2 3 ms ENABLE ON/OFF voltage VEN ON-state voltage VEN + 2.5 - - V VEN OFF-state voltage VEN - - 0.8 V ITRIP threshold voltage ITRIP to GND VITRIP 0.44 0.49 0.54 V ITRIP to shutdown propagation delay tITRIP - 550 - ns ITRIP blanking time tITRIPBL 100 350 - ns VDD and VBS supply undervoltage positive going input threshold VDDUV+ VBSUV+ 10.5 11.1 11.7 V VDD and VBS supply undervoltage negative going input threshold VDDUV- VBSUV- 10.3 10.9 11.5 V VDD and VBS supply undervoltage Ilockout hysteresis VDDUVH VBSUVH 0.14 0.2 - V |
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