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BAS16L 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BAS16L 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2003 Jun 23 3 Philips Semiconductors Product specification High-speed diode BAS16L ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 printed-circuit board with 60 µm copper strip line. Soldering Reflow soldering is the only recommended soldering method. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA 715 mV IF = 10 mA 855 mV IF =50mA 1 V IF = 150 mA 1.25 V IR reverse current see Fig.5 VR = 25 V 30 nA VR =75V 1 µA VR = 25 V; Tj = 150 °C30 µA VR = 75 V; Tj = 150 °C50 µA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.6 1.5 pF trr reverse recovery time when switched from IF =10mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; 4ns Vfr forward recovery voltage when switched from IF = 10 mA; tr =20ns 1.75 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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