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LM307 데이터시트(PDF) 3 Page - National Semiconductor (TI) |
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LM307 데이터시트(HTML) 3 Page - National Semiconductor (TI) |
3 / 10 page Electrical Characteristics (Note 3) (Continued) Parameter Conditions LM107LM207 LM307 Units Min Typ Max Min Typ Max Large Signal Voltage VS e g15V VOUT e g10V 15 Gain RL t 2kX 25 VmV Output Voltage Swing VS e g15V RL e 10 kX g 12 g 14 g 12 g 14 V RL e 2kX g 10 g 13 g 10 g 13 V Input Voltage Range VS e g20V g 15 V VS e g15V a 15 g 12 a 15 V b 13 b 13 Common Mode RS s 50 kX 80 96 70 90 dB Rejection Ratio Supply Voltage RS s 50 kX 80 96 70 96 dB Rejection Ratio Note 1 The maximum junction temperature of the LM107 is 150 C and the LM207LM307 is 100 C For operating at elevated temperatures devices in the H08 package must be derated based on a thermal resistance of 165 CW junction to ambient or 30 CW junction to case The thermal resistance of the dual-in-line package is 100 CW junction to ambient Note 2 For supply voltages less than g15V the absolute maximum input voltage is equal to the supply voltage Note 3 These specifications apply for g5V s VS s a20V and b55 C s TA s a125 C for the LM107 or b25 C s TA a85 C for the LM207 and 0 C s TA s a 70 C and g5V s VS s g15V for the LM307 unless otherwise specified Note 4 Refer to RETS107X for LM107H and LM107J military specifications Schematic Diagram Pin connections shown are for metal can TLH7757 – 1 3 |
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