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MTB015N10RI3 데이터시트(PDF) 5 Page - Cystech Electonics Corp. |
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MTB015N10RI3 데이터시트(HTML) 5 Page - Cystech Electonics Corp. |
5 / 8 page CYStech Electronics Corp. Spec. No. : C053I3 Issued Date : 2016.10.13 Revised Date : Page No. : 5/8 MTB015N10RI3 CYStek Product Specification Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) VDS=10V Pulsed Ta=25°C NormalizedThreshold Voltage vs Junction Tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Maximum Safe Operating Area 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs 1s RDS(ON) Limited TC=25°C, Tj=150°, VGS=10V RθJC=2°C/W, Single Pulse Gate Charge Characteristics 0 2 4 6 8 10 0 1020 3040 5060 Total Gate Charge---Qg(nC) ID=20A VDS=80V VDS=20V VDS=50V Single Pulse Maximum Power Dissipation 0 500 1000 1500 2000 2500 3000 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) TJ(MAX)=150°C TC=25°C RθJC=2°C/W Maximum Drain Current vs Case Temperature 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=10V, RθJC=2°C/W |
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