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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MTB100N10RKJ3 데이터시트(PDF) 5 Page - Cystech Electonics Corp. |
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MTB100N10RKJ3 데이터시트(HTML) 5 Page - Cystech Electonics Corp. |
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5 / 9 page  CYStech Electronics Corp. Spec. No. : C059J3 Issued Date : 2016.09.01 Revised Date : Page No. : 5/9 MTB100N10RKJ3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 1 10 100 1000 0 10 2030 4050 NormalizedThreshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Ciss VDS, Drain-Source Voltage(V) C oss Crss ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 01 2345 678 Total Gate Charge---Qg(nC) ID=8A VDS=80V VDS=20V VDS=50V Maximum Safe Operating Area 0.1 1 10 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs 10 μs RDS(ON) Limited TC=25°C, Tj=150°, VGS=10V RθJC=4.1°C/W, Single Pulse Maximum Drain Current vs Case Temperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=10V, RθJC=4.1°C/W |
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