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STK5F4U3E2D-E 데이터시트(PDF) 1 Page - ON Semiconductor |
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STK5F4U3E2D-E 데이터시트(HTML) 1 Page - ON Semiconductor |
1 / 14 page O0913HK No.A2230-1/14 Semiconductor Components Industries, LLC, 2013 October, 2013 http://onsemi.com STK5F4U3E2D-E Overview This “Inverter Power H-IC” is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control inputs and status outputs are at low voltage levels directly compatible with microcontrollers. A single power supply drive is enabled through the use of bootstrap circuits for upper power supplies Built-in dead-time for shoot-thru protection Having open emitter output for low side IGBTs; individual shunt resistor per phase for OCP Externally accessible embedded thermistor for substrate temperature measurement Shutdown function ‘ITRIP’ to disable all operations of the 6 phase output stage by external input Certification UL1557 (File number: E339285). Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Remarks Ratings Unit Supply voltage VCC P to NU,NV,NW, surge < 500V *1 450 V Collector-emitter voltage VCE P to U,V,W, U to NU, V toNV, or W to NW 600 V Output current Io P , N , U,V,W terminal current. ±50 A P , N , U,V,W terminal current. Tc=100 C ±25 Output peak current Iop P , N, U,V,W terminal current , PW=1ms. ±100 A Pre-driver supply voltage VD1,2,3,4 VB1-VS1,VB2-VS2,VB3-VS3,VDD-VSS *2 20 V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3, terminal. 0.3 to VDD V FAULT terminal voltage VFAULT FAULT terminal. 0.3 to VDD V Maximum loss Pd IGBT per channel 62.5 W Junction temperature Tj IGBT, FRD 150 C Storage temperature Tstg 40 to +125 C Operating temperature Tc HIC case 20 to +100 C Tightening torque MT A screw part at use M4 type screw *3 1.17 Nm Withstand Voltage Vis 50Hz sine wave AC 1 minute *4 2000 VRMS Reference voltage is “VSS” terminal voltage unless otherwise specified. *1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals. *2: Terminal voltage: VD1=VB1-VS1, VD2=VB2-VS2, VD3=VB3-VS3, VD4=VDD-VSS. *3: Flatness of the heat-sink should be 0.25mm and below. *4. Test conditions: AC 2500V, 1 second. Ordering number : EN*A2230 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Thick-Film Hybrid IC Inverter Power H-IC for 3-phase Motor Drive ORDERING INFORMATION See detailed ordering and shipping information on page 14 of this data sheet. Advance Information This document contains information on a new product. Specifications and information herein are subject to change without notice. |
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