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TL431CDR2G 데이터시트(PDF) 2 Page - ON Semiconductor |
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TL431CDR2G 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 18 page TL431A, B Series, NCV431A, B Series, SCV431A www.onsemi.com 2 1.0 k Cathode (K) 2.5 Vref Anode (A) Reference (R) 4.0 k 150 Figure 1. Symbol 10 k 20 pF 800 Cathode (K) 3.28 k Anode (A) - + Anode (A) 800 Reference (R) 2.4 k 7.2 k 20 pF 800 Cathode (K) Reference (R) This device contains 12 active transistors. Figure 2. Representative Block Diagram Figure 3. Representative Schematic Diagram Component values are nominal MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted.) Rating Symbol Value Unit Cathode to Anode Voltage VKA 37 V Cathode Current Range, Continuous IK −100 to +150 mA Reference Input Current Range, Continuous Iref −0.05 to +10 mA Operating Junction Temperature TJ 150 °C Operating Ambient Temperature Range TA °C TL431I, TL431AI, TL431BI −40 to +85 TL431C, TL431AC, TL431BC 0 to +70 NCV431AI, NCV431B, TL431BV, SCV431AI −40 to +125 Storage Temperature Range Tstg −65 to +150 °C Total Power Dissipation @ TA = 25°C PD W Derate above 25 °C Ambient Temperature D, LP Suffix Plastic Package 0.70 P Suffix Plastic Package 1.10 DM Suffix Plastic Package 0.52 Total Power Dissipation @ TC = 25°C PD W Derate above 25 °C Case Temperature D, LP Suffix Plastic Package 1.5 P Suffix Plastic Package 3.0 ESD Rating (Note 1) Human Body Model per JEDEC JESD22−A114F Machine Model per JEDEC JESD22−A115C Charged Device Model per JEDEC JESD22−C101E HBM MM CDM >2000 >200 >500 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device contains latch−up protection and exceeds ±100 mA per JEDEC standard JESD78. RECOMMENDED OPERATING CONDITIONS Condition Symbol Min Max Unit Cathode to Anode Voltage VKA Vref 36 V Cathode Current IK 1.0 100 mA Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. |
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