 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
FQPF8N60 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
||||||||||||||||||||||||||||||
FQPF8N60 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel Mosfet Transistor FQPF8N60 · FEATURES · Drain Current –ID= 7.5A@ TC=25℃ · Drain Source Voltage- : VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements · DESCRITION · Designed for high efficiency switch mode power supply. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 7.5 A IDM Drain Current-Single Plused 30 A PD Total Dissipation @TC=25℃ 48 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.6 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃ /W |
유사한 부품 번호 - FQPF8N60 |
|
유사한 설명 - FQPF8N60 |
|
|
|
링크 URL |
| 개인정보취급방침 |
| ALLDATASHEET.CO.KR |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
