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2SC3989 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Inchange Semiconductor Company Limited

๋ถ€ํ’ˆ๋ช… 2SC3989
์ƒ์„ธ๋‚ด์šฉ  isc Silicon NPN Power Transistor
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์ œ์กฐ์‚ฌ  ISC [Inchange Semiconductor Company Limited]
ํ™ˆํŽ˜์ด์ง€  http://www.iscsemi.cn
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2SC3989 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Inchange Semiconductor Company Limited

   
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INCHANGE Semiconductor
isc Product Specification
isc website๏ผšwww.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SC3989
ELECTRICAL CHARACTERISTICS
TC=25โ„ƒ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA ; IB= 0
500
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 12A; IB= 2.4A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 12A; IB= 2.4A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V ; IE= 0
10
ฮผ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
ฮผ
A
hFE-1
DC Current Gain
IC= 2.4A ; VCE= 5V
15
50
hFE-2
DC Current Gain
IC= 12A ; VCE= 5V
8
fT
Current-Gainโ€”Bandwidth Product
IC= 2.4A ; VCE= 10V
18
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V
260
pF
๏ต
hFE-1 Classifications
L
M
N
15-30
20-40
30-50


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