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MCR12D 데이터시트(PDF) 3 Page - ON Semiconductor

부품명 MCR12D
부품 상세설명  Silicon Controlled Rectifiers
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제조업체  ONSEMI [ON Semiconductor]
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MCR12D 데이터시트(HTML) 3 Page - ON Semiconductor

  MCR12D Datasheet HTML 1Page - ON Semiconductor MCR12D Datasheet HTML 2Page - ON Semiconductor MCR12D Datasheet HTML 3Page - ON Semiconductor MCR12D Datasheet HTML 4Page - ON Semiconductor MCR12D Datasheet HTML 5Page - ON Semiconductor MCR12D Datasheet HTML 6Page - ON Semiconductor MCR12D Datasheet HTML 7Page - ON Semiconductor MCR12D Datasheet HTML 8Page - ON Semiconductor  
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MCR12D, MCR12M, MCR12N
http://onsemi.com
3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
Forward Blocking Region
IRRM at VRRM
(off state)
90
°
180
°
Figure 1. Typical RMS Current Derating
Figure 2. On–State Power Dissipation
Figure 3. Typical On–State Characteristics
Figure 4. Typical Gate Trigger Current versus
Junction Temperature
8
0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
125
120
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
38
0
8
4
2
0
3.0
0.5
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
100
10
1
0.1
TJ, JUNCTION TEMPERATURE (°C)
–10
–40
20
2
0
2.5
115
105
12
3
1
2
6
10
20
1.0
2.0
20
50
80
125
dc
180
°
90
°
60
°
dc
30
°
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 125°C
5
1.5
45
110
4
100
90
95
67
12
14
67
12
910
11
30
°
12
910
11
16
18
535
65
95
–25
110
4
6
8
10
12
14
16
18


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