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MC100EP809MNR4G 데이터시트(PDF) 5 Page - ON Semiconductor |
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MC100EP809MNR4G 데이터시트(HTML) 5 Page - ON Semiconductor |
5 / 10 page MC100EP809 www.onsemi.com 5 Table 6. LVTTL/LVCMOS DC CHARACTERISTICS VCCI = 3.0 V to 3.6 V; VCCO = 1.6 V to 2.0 V, GND = 0 V Symbol Characteristic 0 °C 25 °C 85 °C Unit Min Typ Max Min Typ Max Min Typ Max VIH Input HIGH Voltage 2.0 2.0 2.0 V VIL Input LOW Voltage 0.8 0.8 0.8 V IIH Input HIGH Current −150 150 −150 150 −150 150 mA IIL Input LOW Current −300 300 −300 300 −300 300 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Table 7. HSTL DC CHARACTERISTICS VCCI = 3.0 V to 3.6 V; VCCO = 1.6 V to 2.0 V, GND = 0 V Symbol Characteristic 0 °C 25 °C 85 °C Unit Min Typ Max Min Typ Max Min Typ Max VOH Output HIGH Voltage (Note 3) 1.0 1.2 1.0 1.2 1.0 1.2 V VOL Output LOW Voltage (Note 3) 0.1 0.4 0.1 0.4 0.1 0.4 V VIH Input HIGH Voltage (Figure 6) VX + 0.1 1.6 VX + 0.1 1.6 VX + 0.1 1.6 V VIL Input LOW Voltage (Figure 6) −0.3 VX − 0.1 −0.3 VX − 0.1 −0.3 VX − 0.1 V VX HSTL Input Crossover Voltage 0.68 − 0.9 0.68 − 0.9 0.68 − 0.9 V IIH Input HIGH Current −150 150 −150 150 −150 150 mA IIL Input LOW Current −300 300 −300 300 −300 300 mA VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 4) HSTL_CLK/HSTL_CLK 0.6 VCCI − 1.2 0.6 VCCI − 1.2 0.6 VCCI − 1.2 V V NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 3. All outputs loaded with 50 W to GND (Figure 7). 4. VIHCMR max varies 1:1 with VCCI. The VIHCMR range is referenced to the most positive side of the differential input signal. |
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