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LM185BYH2.5/883 데이터시트(HTML) 4 Page - National Semiconductor (TI)

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부품명 LM185BYH2.5/883
상세내용  Micropower Voltage Reference Diode
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제조사  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
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LM185BYH2.5/883 데이터시트(HTML) 4 Page - National Semiconductor (TI)

 
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Electrical Characteristics
LM185-2.5
LM185BX-2.5
LM385B-2.5
LM185BY-2.5
LM385BX-2.5
LM385-2.5
Units
LM285-2.5
LM385BY-2.5
(Limit)
Parameter
Conditions
Typ
LM285BX-2.5
LM285BY-2.5
Tested
Design
Tested
Design
Tested Design
Limit
Limit
Limit
Limit
Limit
Limit
(Note 5) (Note
8)
(Note
6)
(Note
5)
(Note 6)
(Note
5)
(Note
6)
Reverse
Breakdown
T
A = 25˚C,
2.5
2.462
2.462
2.425
V(Min)
Voltage
20 µA
≤ I
R
≤ 20
mA
2.538
2.538
2.575
V(Max)
Minimum
Operating
Current
13
20
30
20
30
20
30
µA
(Max)
LM385M3-2.5
15
20
Reverse
Breakdown
Voltage Change
with Current
20 µA
≤ I
R
≤ 1
mA
1
1.5
2.0
2.5
2.0
2.5
mV
(Max)
1mA
≤ I
R
≤ 20
mA
10
20
20
25
20
25
mV
(Max)
Reverse
Dynamic
I
R = 100 µA,
1
Impedance
f = 20 Hz
Wideband
Noise (rms)
I
R = 100 µA,
120
µV
10 Hz
≤ f ≤ 10
kHz
Long Term
Stability
I
R = 100 µA,
T = 1000 Hr,
20
ppm
T
A = 25˚C
±0.1˚C
Average
Temperature
I
R = 100 µA
Coefficient
(Note 7)
X Suffix
30
30
ppm/˚C
Y Suffix
50
50
ppm/˚C
All Others
150
150
150
ppm/˚C
(Max)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 2: Refer to RETS185H-2.5 for military specifications.
Note 3: For elevated temperature operation, TJ MAX is:
LM185
150˚C
LM285
125˚C
LM385
100˚C
Thermal Resistance
TO-92
TO-46
SO-8
SOT-23
θ
ja (Junction to Ambient)
180˚C/W (0.4" Leads)
440˚C/W 165˚C/W
283˚C/W
170˚C/W (0.125" Leads)
θ
jc (Junction to Case)
N/A
80˚C/W
N/A
N/A
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