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IRFP470 데이터시트(PDF) 2 Page - IXYS Corporation

부품명 IRFP470
상세설명  N-Channel Enhancement Mode MegaMOS FET
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IRFP470 데이터시트(HTML) 2 Page - IXYS Corporation

  IRFP470 Datasheet HTML 1Page - IXYS Corporation IRFP470 Datasheet HTML 2Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D = 0.5 ID25, pulse test
11
21
S
C
iss
4200
pF
C
oss
V
GS
= 0 V, V
DS = 25 V, f = 1 MHz
450
pF
C
rss
135
pF
t
d(on)
24
30
ns
t
r
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 ID25
33
45
ns
t
d(off)
R
G = 2 Ω, (External)
65
80
ns
t
f
30
40
ns
Q
g(on)
160
190
nC
Q
gs
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 ID25
28
40
nC
Q
gd
75
85
nC
R
thJC
0.42
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
24
A
I
SM
Repetitive; pulse width limited by T
JM
96
A
V
SD
I
F = IS, VGS = 0 V,
1.5
V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F = IS, -di/dt = 100 A/µs, VR = 100 V
600
ns
IRFP 470
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
∅ P 3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1
2
3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025


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