전자부품 데이터시트 검색엔진 |
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2SJ175 데이터시트(PDF) 3 Page - Hitachi Semiconductor |
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2SJ175 데이터시트(HTML) 3 Page - Hitachi Semiconductor |
3 / 5 page 2SJ175 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS –60 — — V I D = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA V GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — –250 µA V DS = –50 V, VGS = 0 Gate to source cutoff voltage V GS(off) –1.0 — –2.0 V I D = –1 mA, VDS = –10 V Static drain to source on state resistance R DS(on) — 0.13 0.18 Ω I D = –5 A, VGS = –10 V* 1 — 0.18 0.25 I D = –5 A, VGS = –4 V* 1 Forward transfer admittance |y fs| 4.0 6.5 — S I D = –5 A, VDS = –10 V* 1 Input capacitance Ciss — 900 — pF V DS = –10 V, VGS = 0, f = 1 MHz Output capacitance Coss — 460 — pF Reverse transfer capacitance Crss — 130 — pF Turn-on delay time t d(on) —8 —ns I D = –5 A, VGS = –10 V, R L = 6 Ω Rise time t r —65 — ns Turn-off delay time t d(off) — 170 — ns Fall time t f — 105 — ns Body to drain diode forward voltage V DF —–1.1 —V I F = –10 A, VGS = 0 Body to drain diode reverse recovery time t rr — 200 — ns I F = –10 A, VGS = 0, di F/dt = 50 A/µs Note 1. Pulse test See characteristic curves of 2SJ172 |
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