전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

KM416S4030CT-FL 데이터시트(PDF) 3 Page - Samsung semiconductor

부품명 KM416S4030CT-FL
상세설명  1M x 16Bit x 4 Banks Synchronous DRAM
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416S4030CT-FL 데이터시트(HTML) 3 Page - Samsung semiconductor

  KM416S4030CT-FL Datasheet HTML 1Page - Samsung semiconductor KM416S4030CT-FL Datasheet HTML 2Page - Samsung semiconductor KM416S4030CT-FL Datasheet HTML 3Page - Samsung semiconductor KM416S4030CT-FL Datasheet HTML 4Page - Samsung semiconductor KM416S4030CT-FL Datasheet HTML 5Page - Samsung semiconductor KM416S4030CT-FL Datasheet HTML 6Page - Samsung semiconductor KM416S4030CT-FL Datasheet HTML 7Page - Samsung semiconductor KM416S4030CT-FL Datasheet HTML 8Page - Samsung semiconductor KM416S4030CT-FL Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 11 page
background image
KM416S4030C
REV. 2 June '98
CMOS SDRAM
Preliminary
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
PIN CONFIGURATION (Top view)
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
N.C/RFU
UDQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
VSS
54Pin TSOP (II)
(400mil x 875mil)
(0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
CS
Chip select
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
A0 ~ A11
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA 0 ~ RA11, Column address : CA 0 ~ CA7
BA0 ~ BA1
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with
RAS low.
Enables row access & precharge.
CAS
Column address strobe
Latches column addresses on the positive going edge of the CLK with
CAS low.
Enables column access.
WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
L(U)DQM
Data input/output mask
Makes data output Hi-Z, t SHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
DQ0 ~ 15
Data input/output
Data inputs/outputs are multiplexed on the same pins.
VDD/VSS
Power supply/ground
Power and ground for the input buffers and the core logic.
VDDQ/VSSQ
Data output power/ground
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
N.C/RFU
No connection
/reserved for future use
This pin is recommended to be left No Connection on the device.


유사한 부품 번호 - KM416S4030CT-FL

제조업체부품명데이터시트상세설명
logo
Samsung semiconductor
KM416S1021C SAMSUNG-KM416S1021C Datasheet
78Kb / 8P
   512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-G7 SAMSUNG-KM416S1021CT-G7 Datasheet
78Kb / 8P
   512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-G8 SAMSUNG-KM416S1021CT-G8 Datasheet
78Kb / 8P
   512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-GS SAMSUNG-KM416S1021CT-GS Datasheet
78Kb / 8P
   512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
logo
List of Unclassifed Man...
KM416S1120D ETC-KM416S1120D Datasheet
1Mb / 43P
   512K x 16bit x 2 Banks Synchronous DRAM LVTTL
More results

유사한 설명 - KM416S4030CT-FL

제조업체부품명데이터시트상세설명
logo
Hynix Semiconductor
HY57V651620B HYNIX-HY57V651620B Datasheet
81Kb / 12P
   4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG-I HYNIX-HY57V641620HG-I Datasheet
145Kb / 12P
   4 Banks x 1M x 16Bit Synchronous DRAM
logo
Samsung semiconductor
K4S641632C SAMSUNG-K4S641632C Datasheet
1Mb / 42P
   1M x 16Bit x 4 Banks Synchronous DRAM
logo
Hynix Semiconductor
HY5V66GF HYNIX-HY5V66GF Datasheet
208Kb / 11P
   4 Banks x 1M x 16Bit Synchronous DRAM
logo
List of Unclassifed Man...
TBS6416B4E ETC2-TBS6416B4E Datasheet
225Kb / 8P
   1M x 16Bit x 4 Banks synchronous DRAM
logo
Hynix Semiconductor
HY57V641620HG HYNIX-HY57V641620HG Datasheet
86Kb / 12P
   4 Banks x 1M x 16Bit Synchronous DRAM
logo
Samsung semiconductor
K4S641632F SAMSUNG-K4S641632F Datasheet
133Kb / 11P
   64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632D SAMSUNG-K4S641632D Datasheet
115Kb / 11P
   64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4D64163HF SAMSUNG-K4D64163HF Datasheet
162Kb / 16P
   1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
KM416S8030 SAMSUNG-KM416S8030 Datasheet
116Kb / 10P
   2M x 16Bit x 4 Banks Synchronous DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com