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SI4542DY 데이터시트(PDF) 6 Page - Vishay Siliconix |
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SI4542DY 데이터시트(HTML) 6 Page - Vishay Siliconix |
6 / 7 page www.vishay.com 6 Document Number: 70666 S09-0868-Rev. G, 18-May-09 Vishay Siliconix Si4542DY P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70666. Source-Drain Diode Forward Voltage Threshold Voltage VSD - Source-to-Drain Voltage (V) 40 10 1 0 0.3 0.6 0.9 1.2 1.5 TJ = 150 °C TJ = 25 °C TJ - Temperature (°C) - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VGS - Gate-to-Source Voltage (V) 0.00 0.04 0.08 0.12 0.16 0.20 0 2468 10 ID = 6.1 A 0 5 10 15 20 25 30 0.01 0.10 1.00 10.00 Time (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10- 4 10- 3 10- 2 10- 1 110 30 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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